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參數(shù)資料
| 型號： | APTGF25H120T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge NPT IGBT Power Module |
| 中文描述： | 全-橋不擴(kuò)散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 328K |
| 代理商： | APTGF25H120T3 |
APTGF25H120T3
A
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
Output characteristics (V
GE
=15V)
J
T
J
=125°C
0
10
20
30
40
50
60
70
80
0
1
2
3
4
5
6
7
8
I
V
CE
, Collector to Emitter Voltage (V)
250μs Pulse Test
< 0.5% Duty cycle
Output Characteristics (V
GE
=10V)
T
J
=25°C
T
J
=125°C
0
4
8
12
16
20
0
0.5
1
1.5
2
2.5
3
3.5
I
V
CE
, Collector to Emitter Voltage (V)
250μs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
0
2.5
V
GE
, Gate to Emitter Voltage (V)
5
7.5
10
12.5
15
I
250μs Pulse Test
< 0.5% Duty cycle
Gate Charge
V
CE
=240V
V
CE
=600V
V
CE
=960V
0
2
4
6
8
10
12
14
16
18
0
30
60
90
120
150
180
Gate Charge (nC)
V
G
,
I
C
= 25A
T
J
= 25°C
Ic=50A
Ic=25A
Ic=12.5A
0
1
2
3
4
5
6
7
8
9
9
10
11
12
13
14
15
16
V
GE
, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
C
,
T
J
= 125°C
250μs Pulse Test
< 0.5% Duty cycle
Ic=50A
Ic=25A
Ic=12.5A
0
1
2
3
4
5
6
-50
-25
0
25
50
75
100
125
T
J
, Junction Temperature (°C)
V
C
, On state Voltage vs Junction Temperature
250μs Pulse Test
< 0.5% Duty cycle
GE
= 15V
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-50
-25
T
J
, Junction Temperature (°C)
0
25
50
75
100
125
C
(
Breakdown Voltage vs Junction Temp.
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125 150
T
C
, Case Temperature (°C)
I
DC Collector Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF25H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF25H120T3G_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF25X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF25X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF25X120P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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