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參數(shù)資料
| 型號： | APTGF25H120T3 |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Full - Bridge NPT IGBT Power Module |
| 中文描述： | 全-橋不擴散核武器條約IGBT功率模塊 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 328K |
| 代理商： | APTGF25H120T3 |
APTGF25H120T3
A
APT website – http://www.advancedpower.com
2 - 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 500μA
V
GE
= 0V
V
CE
= 1200V
V
GE
=15V
I
C
= 25A
V
GE
= V
CE
, I
C
= 1mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1
1
3.2
4.0
Max
500
3.7
6
400
Unit
V
μA
mA
1200
2.5
4
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
V
CE(on)
Collector Emitter on Voltage
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
X
E
off
Turn-off Switching Energy
Y
X
E
on
includes diode reverse recovery
Y
In accordance with JEDEC standard JESD24-1
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
1650
250
110
160
10
70
60
50
305
30
60
50
346
40
3.5
1.5
Max
Unit
pF
V
GE
= 15V
V
Bus
= 300V
I
C
=25A
nC
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 25A
R
G
= 22
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 25A
R
G
= 22
ns
ns
mJ
Test Conditions
Min
1200
Typ
25
2.3
1.8
0.13
Max
250
500
2.8
Unit
V
T
j
= 25°C
T
j
= 125°C
Tc = 80°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
RM
Maximum Reverse Leakage Current
V
R
=1200V
μA
I
F(AV)
Maximum Average Forward Current
50% duty cycle
I
F
= 25A
V
GE
= 0V
A
V
F
Diode Forward Voltage
V
t
rr
Reverse Recovery Time
μs
2.3
6
Q
rr
Reverse Recovery Charge
I
F
= 25A
V
R
= 600V
di/dt =800A/μs
μC
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF25H120T3G | 功能描述:IGBT MODULE NPT FULL BRIDGE SP3 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| APTGF25H120T3G_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Full - Bridge NPT IGBT Power Module |
| APTGF25X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF25X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF25X120P2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
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