參數(shù)資料
型號(hào): APTGF200U120D
廠商: Advanced Power Technology Ltd.
英文描述: Single Switch with Series diodes NPT IGBT Power Module
中文描述: 單系列開(kāi)關(guān)二極管和IGBT功率模塊不擴(kuò)散核武器條約
文件頁(yè)數(shù): 6/6頁(yè)
文件大小: 300K
代理商: APTGF200U120D
APTGF200U120D
A
APT website – http://www.advancedpower.com
6 – 6
Cies
Cres
Coes
100
1000
10000
100000
0
10
20
30
40
50
C
Capacitance vs Collector to Emitter Voltage
V
CE
, Collector to Emitter Voltage (V)
0
100
200
300
400
500
600
700
0
400
800
1200
I
C
,
Minimum Switching Safe Operating Area
V
CE
, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
Rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
0
20
40
60
80
100
120
20
60
I
C
, Collector Current (A)
100
140
180
220
Operating Frequency vs Collector Current
F
V
CE
= 600V
D = 50%
R
G
= 1.2
T
J
= 125°C
T
C
= 75°C
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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