參數(shù)資料
型號(hào): APTGF200U60D4
廠(chǎng)商: Advanced Power Technology Ltd.
英文描述: Single switch NPT IGBT Power Module
中文描述: 單開(kāi)關(guān)不擴(kuò)散核武器條約IGBT功率模塊
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 273K
代理商: APTGF200U60D4
APTGF200U60D4
A
APT website – http://www.advancedpower.com
1 - 5
Application
Features
Absolute maximum ratings
Symbol
V
CES
Collector - Emitter Breakdown Voltage
Parameter
Max ratings
600
250
200
400
±20
735
400A@420V
Unit
V
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
I
C
Continuous Collector Current
I
CM
V
GE
P
D
RBSOA
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
A
V
W
3
5
2
1
5
3
4
1
2
V
CES
= 600V
I
C
= 200A @ Tc = 80°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
Avalanche energy rated
-
RBSOA and SCSOA rated
Kelvin emitter for easy drive
Low stray inductance
-
M6 connectors for power
-
M4 connectors for signal
High level of integration
Benefits
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Single switch
NPT IGBT Power Module
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參數(shù)描述
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