參數(shù)資料
型號: APTGF200U60D4
廠商: Advanced Power Technology Ltd.
英文描述: Single switch NPT IGBT Power Module
中文描述: 單開關不擴散核武器條約IGBT功率模塊
文件頁數(shù): 5/5頁
文件大?。?/td> 273K
代理商: APTGF200U60D4
APTGF200U60D4
A
APT website – http://www.advancedpower.com
5 - 5
hard
switching
ZCS
ZVS
0
20
40
60
80
100
0
50
100
150
200
250
300
I
C
(A)
F
V
CE
=300V
D=50%
R
G
=1.5
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current
Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
0
50
100
150
200
250
300
350
400
0
0.2
0.4
0.6 0.8
1
1.2 1.4
1.6
V
F
(V)
I
C
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001
0.0001
0.001
rectangular Pulse Duration (Seconds)
0.01
0.1
1
10
T
Diode
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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