參數(shù)資料
型號： APTGF200U120D
廠商： Advanced Power Technology Ltd.
英文描述： Single Switch with Series diodes NPT IGBT Power Module
中文描述： 單系列開關(guān)二極管和IGBT功率模塊不擴散核武器條約
文件頁數(shù)： 2/6頁
文件大?。?/td> 300K
代理商： APTGF200U120D
APTGF200U120D
A
APT website – http://www.advancedpower.com
2 – 6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BV
CES
Collector - Emitter Breakdown Voltage
Test Conditions
V
GE
= 0V, I
C
= 1.5mA
V
GE
= 0V
V
CE
= 1200V
Min
1200
4.5
Typ
7.0
3.2
4.0
Max
1.5
3.7
6.5
±300
Unit
V
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
I
CES
Zero Gate Voltage Collector Current
mA
V
CE(on)
Collector Emitter on Voltage
V
GE
=15V
I
C
= 200A
V
GE
= V
CE
, I
C
= 4mA
V
GE
= ±20V, V
CE
= 0V
V
V
GE(th)
I
GES
Dynamic Characteristics
Symbol Characteristic
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Q
g
Total gate Charge
Q
ge
Gate – Emitter Charge
Q
gc
Gate – Collector Charge
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
T
d(on)
Turn-on Delay Time
T
r
Rise Time
T
d(off)
Turn-off Delay Time
T
f
Fall Time
E
on
Turn-on Switching Energy
E
off
Turn-off Switching Energy
Series diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Repetitive Reverse Voltage
I
F(AV)
Maximum Average Forward Current
Gate Threshold Voltage
Gate – Emitter Leakage Current
V
nA
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
Min
Typ
13.8
1.32
880
1320
140
800
35
65
320
30
21.6
9.2
35
65
360
40
27.9
12.2
Max
Unit
nF
V
GS
= 15V
V
Bus
= 600V
I
C
= 200A
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 200A
R
G
= 1.2
nC
ns
Inductive Switching (125°C)
V
GE
= 15V
V
Bus
= 600V
I
C
= 200A
R
G
= 1.2
mJ
Test Conditions
Min
1200
Typ
240
2
2.3
1.8
Max
2.5
Unit
A
50% duty cycle
I
F
= 240A
I
F
= 480A
I
F
= 240A
I
F
= 240A
V
R
= 800V
di/dt =800A/μs
I
F
= 240A
V
R
= 800V
di/dt =800A/μs
Tc = 70°C
V
F
Diode Forward Voltage
T
j
= 125°C
V
T
j
= 25°C
400
t
rr
Reverse Recovery Time
T
j
= 125°C
T
j
= 25°C
470
ns
4.8
Q
rr
Reverse Recovery Charge
T
j
= 125°C
16
μC
相關(guān)PDF資料
PDF描述
APTGF200U60D4 Single switch NPT IGBT Power Module
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF200U120DG 功能描述:IGBT 1200V 275A 1136W SP6 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B
APTGF200U120T1G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF200U60D4 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module
APTGF20X60BTP2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module
APTGF20X60BTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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