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參數(shù)資料
| 型號(hào)： | APTGF200U120D |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Single Switch with Series diodes NPT IGBT Power Module |
| 中文描述： | 單系列開(kāi)關(guān)二極管和IGBT功率模塊不擴(kuò)散核武器條約 |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 300K |
| 代理商： | APTGF200U120D |
APTGF200U120D
A
APT website – http://www.advancedpower.com
5 – 6
V
GE
= 15V
25
30
35
40
45
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
t
Turn-On Delay Time vs Collector Current
V
CE
= 600V
R
G
= 1.2
V
GE
=15V,
T
J
=25°C
V
GE
=15V,
T
J
=125°C
200
250
300
350
400
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
V
CE
= 600V
R
G
= 1.2
V
GE
=15V
20
60
100
140
180
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
t
Current Rise Time vs Collector Current
V
CE
= 600V
R
G
= 1.2
T
J
= 25°C
T
J
= 125°C
20
30
40
50
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
t
Current Fall Time vs Collector Current
V
CE
= 600V, V
GE
= 15V, R
G
= 1.2
T
J
=25°C,
V
GE
=15V
T
J
=125°C,
V
GE
=15V
0
20
40
60
80
100
120
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
V
CE
= 600V
R
G
= 1.2
T
J
= 25°C
T
J
= 125°C
0
8
16
24
32
0
100
200
300
400
500
I
CE
, Collector to Emitter Current (A)
E
Turn-Off Energy Loss vs Collector Current
V
CE
= 600V
V
GE
= 15V
R
G
= 1.2
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
40
48
56
64
72
0
2.5
5
7.5
10
12.5
Gate Resistance (Ohms)
S
Switching Energy Losses vs Gate Resistance
V
CE
= 600V
V
GE
= 15V
T
J
= 125°C
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
0
25
T
J
, Junction Temperature (°C)
50
75
100
125
S
Switching Energy Losses vs Junction Temp.
V
CE
= 600V
V
GE
= 15V
R
G
= 1.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF200U120DG | 功能描述:IGBT 1200V 275A 1136W SP6 RoHS:是 類(lèi)別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類(lèi)型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開(kāi)）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類(lèi)型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF200U120T1G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF200U60D4 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module |
| APTGF20X60BTP2 | 制造商:ADPOW 制造商全稱(chēng):Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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