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參數(shù)資料
| 型號： | APT65GP60J |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 109K |
| 代理商： | APT65GP60J |
0
APT65GP60J
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 300V
I
C
= 65A
T
J
= 150°C, R
G
= 5
,
V
GE
=
15V, L = 100μH,V
CE
= 600V
Inductive Switching (25°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 65A
R
G
= 5
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 400V
V
GE
= 15V
I
C
= 65A
R
G
= 5
T
J
= +125°C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
4
Turn-on Switching Energy (Diode)
5
Turn-off Switching Energy
6
MIN
TYP
MAX
7400
580
35
7.5
210
50
65
250
30
54
91
65
605
1408
896
30
54
128
91
605
1925
1470
UNIT
pF
V
nC
A
ns
μ
J
ns
μ
J
UNIT
°C/W
gm
MIN
TYP
MAX
.29
N/A
29.2
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
R
Θ
JC
R
Θ
JC
W
T
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the E
on2
test circuit. (See Figures 21, 22.)
6 E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
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| APT66F60B2 | 功能描述:MOSFET N-CH 600V 70A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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