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參數(shù)資料
| 型號(hào)： | APT65GP60J |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | APT65GP60J |
0
APT65GP60J
600V
The POWER MOS 7
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
Low Gate Charge
Ultrafast Tail Current shutoff
100 kHz operation @ 400V, 33A
50 kHz operation @ 400V, 47A
SSOA rated
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
APT65GP60J
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
MAX
600
3
4.5
6
2.2
2.7
2.1
1000
5000
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 1000μA)
Gate Threshold Voltage (V
CE
= V
GE
, I
C
= 2.5mA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 65A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 65A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
BV
CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
UNIT
Volts
μA
nA
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
600
±20
±30
130
60
250
250A@600V
431
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
@ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 25°C
Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
POWER MOS 7
IGBT
G
C
E
SOT-227
G
E
E
C
ISOTOP
"UL Recognized"
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