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參數(shù)資料
| 型號： | APT40GF120JRD |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 115K |
| 代理商： | APT40GF120JRD |
APT40GF120JRD
052-6256
Rev
B
7-2002
PEARSON 411
CURRENT
TRANSFORMER
0.5 IRRM
di
F/dt Adjust
D.U.T.
+15v
-15v
0v
Vr
4
3
1
2
5
0.75 IRRM
trr/Qrr
Waveform
Zero
6
1
2
3
4
6
di
F/dt - Current Slew Rate, Rate of Forward
Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Peak Reverse Recovery Current.
trr - Reverse Recovery Time Measured from Point of IF
Qrr - Area Under the Curve Defined by IRRM and trr.
diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr.
Current Falling Through Zero to a Tangent Line
{
diM/dt
}
Extrapolated Through Zero Defined by 0.75 and 0.50 I
RRM.
6
Figure 17, Diode Reverse Recovery Test Circuit and Waveforms
Figure 18, Diode Reverse Recovery Waveform and Definitions
Qrr = 1/2 (trr . IRRM)
30H
MIN
TYP
MAX
70
85
70
130
170
18
30
29
40
630
1820
12
900
600
UNIT
ns
Amps
nC
Volts
A/s
Characteristic
Reverse Recovery Time, I
F
= 1.0A, di
F
/dt = -15A/s, V
R
= 30V, T
J
= 25°C
Reverse Recovery Time
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V
T
J
= 100°C
Forward Recovery Time
T
J
= 25°C
I
F
= 60A, di
F
/dt = 480A/s, V
R
= 650V
T
J
= 100°C
Reverse Recovery Current
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V
T
J
= 100°C
Recovery Charge
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
= 650V
T
J
= 100°C
Forward Recovery Voltage
T
J
= 25°C
I
F
= 60A, di
F
/dt = 480A/s, V
R
= 650V
T
J
= 100°C
Rate of Fall of Recovery Current
T
J
= 25°C
I
F
= 60A, di
F
/dt = -480A/s, V
R
=650V
T
J
= 100°C
DYNAMIC CHARACTERISTICS (FRED)
Symbol
t
rr1
t
rr2
t
rr3
t
fr1
t
fr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
V
fr1
V
fr2
dIM/dt
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT40GF120JRDQ2 | 功能描述:IGBT 1200V 77A 347W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT40GL120JU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227 |
| APT40GL120JU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227 |
| APT40GLQ120JCU2 | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT40GP60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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