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參數(shù)資料
| 型號： | APT40GF120JRD |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 115K |
| 代理商： | APT40GF120JRD |
APT40GF120JRD
052-6256
Rev
B
7-2002
MIN
TYP
MAX
4.5
5.5
6.5
2.9
3.4
3.5
4.1
0.5
5.0
±100
Characteristic / Test Conditions
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
VGE(TH)
VCE(ON)
ICES
IGES
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage
(RGE = 20K)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 60°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11 TC = 90°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT40GF120JRD
1200
±20
60
40
150
100
390
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Tail Current
Ultra Low Leakage Current
Low Forward Voltage Drop
RBSOA and SCSOA Rated
High Freq. Switching to 20KHz
APT40GF120JRD
1200V
60A
SOT-227
G
E
C
ISOTOP
"UL Recognized"
G
C
E
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| APT40GF120JRD | 60 A, 1200 V, N-CHANNEL IGBT |
| APT40GP60B2DF2 | 100 A, 600 V, N-CHANNEL IGBT |
| APT40GP60S | 100 A, 600 V, N-CHANNEL IGBT |
| APT40GP60SG | 100 A, 600 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT40GF120JRDQ2 | 功能描述:IGBT 1200V 77A 347W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT40GL120JU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227 |
| APT40GL120JU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227 |
| APT40GLQ120JCU2 | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT40GP60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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