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參數(shù)資料
| 型號(hào)： | APT40GF120JRD |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 60 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 115K |
| 代理商： | APT40GF120JRD |
APT40GF120JRD
052-6256
Rev
B
7-2002
VCC = 0.66 VCES
VGE= +15V
TJ = +25°C
IC = IC2
VCC = 0.66 VCES
VGE= +15V
TJ = +125°C
RG = 10
VCC = 0.66 VCES
VGE= +15V
RG = 10
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
0.1
1.0
10
100
1000
80
60
40
20
0
40
30
20
10
0
8
6
4
2
0
ForBoth:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gatedriveasspecified
Powerdissapation=110W
ILOAD=IRMS offundamental
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
50
1
0.1
50
10
1
.1
I C
,COLLECTOR
CURRENT
(AMPERES)
TOTAL
SWITCHING
ENERGY
LOSSES
(mJ)
B
V
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
(SAT),
COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION
VOLTAGE
(VOLTS)
SWITCHING
ENERGY
LOSSES
(mJ)
SWITCHING
ENERGY
LOSSES
(mJ)
I C
,COLLECTOR
CURRENT
(AMPERES)
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
TJ,JUNCTIONTEMPERATURE(°C)
RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ,JUNCTIONTEMPERATURE(°C)
IC,COLLECTORCURRENT(AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (kHz)
Figure 14,Typical Load Current vs Frequency
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT40GF120JRDQ2 | 功能描述:IGBT 1200V 77A 347W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無(wú) 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT40GL120JU2 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227 |
| APT40GL120JU3 | 制造商:Microsemi Corporation 功能描述:POWER MODULE - IGBT - Bulk 制造商:Microsemi Corporation 功能描述:MOD IGBT 1200V 65A SOT-227 |
| APT40GLQ120JCU2 | 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APT40GP60B | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
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