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參數(shù)資料
| 型號(hào)： | AP502-PCB |
| 英文描述： | UMTS-band 4W HBT Amplifier Module |
| 中文描述： | UMTS的頻段4瓦異質(zhì)結(jié)雙極晶體管放大器模塊 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 397K |
| 代理商： | AP502-PCB |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 4 of 5 February 2006
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
MTTF Calculation
The MTTF of the AP502 can be calculated by first
determining how much power is being dissipated by the
amplifier module. Because the device’s intended application
is to be a power amplifier pre-driver or final stage output
amplifier, the output RF power of the amplifier will help
lower the overall power dissipation. In addition, the
amplifier can be biased with different quiescent currents, so
the calculation of the MTTF is custom to each application.
The power dissipation of the device can be calculated with
the following equation:
P
diss
= V
cc
* I
cc
– (Output RF Power – Input RF Power),
V
cc
= Operating supply voltage =
12V
I
cc
= Operating current
{The RF power is converted to Watts}
While the maximum recommended case temperature on the
datasheet is listed at 85
C, it is suggested that customers
maintain an MTTF above 1 million hours. This would
convert to a derating curve for maximum case temperature vs.
power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation
to maintain 1 million hours MTTF
90
50
60
70
80
4
5
6
7
8
9
10
11
12
Power Dissipation (Watts)
M
To calculate the MTTF for the module, the junction
temperature needs to be determined. This can be easily
calculated with the module’s power dissipation, the thermal
resistance value, and the case temperature of operation:
T
j
= P
diss
* R
th
+ T
case
T
j
= Junction temperature
P
diss
= Power dissipation (calculated from above)
R
th
= Thermal resistance =
9
C/W
T
case
= Case temperature of module’s heat sink
From a numerical standpoint, the MTTF can be calculated
using the Arrhenius equation:
MTTF = A* e
(Ea/k/Tj)
A = Pre-exponential Factor =
6.087 x 10
-11
hours
Ea = Activation Energy =
1.39 eV
k = Boltzmann’s Constant =
8.617 x 10
-5
eV/ oK
T
j
= Junction Temperature (oK) = T
j
(oC) + 273
A graphical view of the MTTF can be shown in the plot
below.
MTTF vs. Junction Temperature
1.E+07
1.E+05
1.E+06
130
140
150
160
170
180
Junction Temperature (°C)
M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP503 | DCS-band 4W HBT Amplifier Module |
| AP503-PCB | DCS-band 4W HBT Amplifier Module |
| AP504 | DCS-band 4W HBT Amplifier Module |
| AP504-PCB | DCS-band 4W HBT Amplifier Module |
| AP512 | UMTS-band 8W HBT Amplifier Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP503 | 功能描述:射頻放大器 1805-1880MHz 32.2dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AP503-PCB | 功能描述:射頻開發(fā)工具 1.80-1.88GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP504 | 功能描述:射頻放大器 1705-790MHz 31.5dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AP504-PCB | 功能描述:射頻開發(fā)工具 1.71-1.79GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評(píng)估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP50B10 | 制造商:LEM Holdings SSA 功能描述:AP50B10 split core current transducer |
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