參數(shù)資料
型號： AP502-PCB
英文描述： UMTS-band 4W HBT Amplifier Module
中文描述： UMTS的頻段4瓦異質(zhì)結(jié)雙極晶體管放大器模塊
文件頁數(shù)： 1/5頁
文件大小： 397K
代理商： AP502-PCB
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5 February 2006
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
Product Features
2110 – 2170 MHz
30 dB Gain
+36 dBm P1dB
-55 dBc ACLR
@ 25 dBm wCDMA linear power
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-compliant flange-mount pkg
Applications
Final stage amplifiers for repeaters
Optimized for driver amplifier
PA mobile infrastructure
Product Description
The AP502 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 30 dB gain, while being able to achieve
high performance for PCS-band applications with +36 dBm
of compressed 1dB power. The module has been internally
optimized for driver applications provide -55 dBc ACLR at
25 for wCDMA applications. The module can be biased
down for current when higher efficiency is required.
The AP502 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance to ensure long
lifetimes. All devices are 100% RF and DC tested.
The AP502 is targeted for use as a driver or final stage amplifier
in wireless infrastructure where high linearity and high power is
required. This combination makes the device an excellent
candidate for next generation multi-carrier 3G base stations.
Functional Diagram
Top View
Pin No.
1
2 / 4
3 / 5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Specifications
25 oC, V
cc
=12V, V
pd
=5V, I
cq
=820mA, R7=0
, 50
unmatched fixture
Parameter
Operational Bandwidth
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm
(1)
wCDMA ACLR2 @ 25dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
Device Voltage, Vpd
(2)
Load Stability
Units Min Typ
MHz
MHz
dB
28.5
dBc
dB
dB
dBm
dBm
mA
790
mA
780
V
V
VSWR
10:1
Max
2110 – 2170
2140
30
-55
-68
11
5.3
+36
+52
840
820
+12
+5
34.5
-50
-53
940
920
1. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±5 MHz offset.
2. 3GPP wCDMA signal modulation, Test model 1+32 DPCH, 3.84 MHz BW, ±10 MHz offset.
3. Pull-down voltage: 0V = “OFF”, 5V=”O(jiān)N”
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
Rating
-40 to +85
°
C
-55 to +150
°
C
+15 dBm
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance
(4)
Parameter
Operating Current @ 25 dBm
Quiescent Current, Icq
Device Voltage, Vcc
R7 value
Test Frequency
Power Gain
wCDMA ACLR1 @ 25dBm
(2)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Units Config1 Config2
mA
840
mA
820
V
+12
0
MHz
2140
dB
30
dBc
-55
dB
11
dB
5.3
dBm
+36
dBm
+52
420
250
+12
730
2140
27.7
-47.5
10
7
+36
+50
4. Configuration 1 has the module biased in Class AB and is detailed on page 2 of the datasheet.
Performance is shown at 25 oC, Vcc=12V, Vpd=5V, Icq=820mA, R7=0
, 50
unmatched fixture.
Configuration 2 has the module biased in near Class B and is detailed on page 3 of the datasheet.
Performance is shown at 25 oC, Vcc=12V, Vpd=5V, Icq=250mA, R7=730
, 50
tuned fixture.
Ordering Information
Part No.
AP502
AP502-PCB
Description
UMTS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=820mA)
1 2 3 4 5 6
相關(guān)PDF資料
PDF描述
AP503 DCS-band 4W HBT Amplifier Module
AP503-PCB DCS-band 4W HBT Amplifier Module
AP504 DCS-band 4W HBT Amplifier Module
AP504-PCB DCS-band 4W HBT Amplifier Module
AP512 UMTS-band 8W HBT Amplifier Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP503 功能描述:射頻放大器 1805-1880MHz 32.2dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AP503-PCB 功能描述:射頻開發(fā)工具 1.80-1.88GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AP504 功能描述:射頻放大器 1705-790MHz 31.5dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AP504-PCB 功能描述:射頻開發(fā)工具 1.71-1.79GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AP50B10 制造商:LEM Holdings SSA 功能描述:AP50B10 split core current transducer
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