參數(shù)資料
型號(hào): AP504
英文描述: DCS-band 4W HBT Amplifier Module
中文描述: 集散控制系統(tǒng)帶4瓦異質(zhì)結(jié)雙極晶體管放大器模塊
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 230K
代理商: AP504
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5 April 2007
AP504
DCS-band 4W HBT Amplifier Module
Product Features
1705 – 1790 MHz
31.5 dB Gain
+25 dBm CDMA2k 7
fa
Power
(-63 dBc ACPR)
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-compliant flange-mount pkg
Applications
Final stage amplifiers for Repeaters
Optimized for driver amplifier PA
mobile infrastructure
Product Description
The AP504 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 31.5 dB gain. The module has been
internally optimized for linearity to provide +25 dBm (-63
dBc ACPR) linear power for 7-carrier CDMA2000
applications.
The AP504 uses a high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The module operates off of a +12V
supply and does not requiring any negative biasing voltages;
an internal active bias allows the amplifier to maintain high
linearity over temperature. It has the added feature of a
+5V power down control pin. While the module has been
tuned for optimal performance for Class AB applications,
the quiescent current can also be adjusted for Class B
applications through an external resistor. A low-cost metal
housing allows the device to have a low thermal resistance
and achieves over 100 years MTTF. All devices are 100%
RF and DC tested.
The AP504 is targeted for use as a driver or final stage
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device
an excellent candidate for next generation multi-carrier 3G
base stations using the DCS1800 frequency band.
Functional Diagram
Top View
Pin No.
1
2 / 4
3 / 5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Specifications
(1)
25 oC, V
cc
=12V, V
pd
=5V, I
cq
=835mA, R7=0
, 50
unmatched fixture
Parameter
Operational Bandwidth
Test Frequency
Adjacent Channel Power Ratio
Power Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current
(2)
Quiescent Current, Icq
(2)
Device Voltage, Vcc
Device Voltage, Vpd
Load Stability
Units
MHz
MHz
dBc
dB
dB
dB
dBm
dBm
mA
mA
V
V
VSWR
Min
Typ
Max Test Conditions
1705 – 1790
1765
-63.2
-61
CDMA2000 7
fa
25 dBm Total Power, 885 kHz offset
31.5
35.5
Pout = +25 dBm
11
5
+36
+52
Pout = +23 dBm/tone,
f
= 1 MHz
850
940
Pout = +25 dBm
835
920
+12
+5
Pull-down voltage: 0V = “OFF”, 5V=”O(jiān)N”
30.5
790
780
10:1
1. Test conditions unless otherwise noted: 25oC.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
with output terminated in 50
Rating
-40 to +85
°
C
-55 to +150
°
C
+15 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AP504
Description
DCS-band 4W HBT Amplifier Module
Fully-Assembled Evaluation Board
(Class AB configuration, Icq=835mA)
AP504-PCB
1 2 3 4 5 6
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