參數(shù)資料
型號： AP512-PCB
英文描述： UMTS-band 8W HBT Amplifier Module
中文描述： UMTS的頻段8瓦特異質(zhì)結(jié)雙極晶體管放大器模塊
文件頁數(shù)： 1/5頁
文件大?。?/td> 275K
代理商： AP512-PCB
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 1 of 5 June 2006
AP512
UMTS-band 8W HBT Amplifier Module
Product Information
The Communications Edge
TM
Product Features
2110 – 2170 MHz
28.5 dB Gain
-55 dBc ACLR
@ 28 dBm W-CDMA linear power
+39 dBm P1dB
+12 V Single Supply
Power Down Mode
Bias Current Adjustable
RoHS-complaint flange-mount pkg
Applications
Final stage amplifiers for Repeaters
Optimized for driver amplifier PA
mobile infrastructure
Product Description
The AP512 is a high dynamic range power amplifier in a
RoHS-compliant flange-mount package. The multi-stage
amplifier module has 28.5 dB gain, while being able to
achieve high performance for UMTS-band applications with
+39 dBm of compressed 1dB power. The module has been
internally optimized for linearity to provide -55 dBc ALCR
at 28 dBm power for W-CDMA applications.
The AP512 uses a high reliability InGaP/GaAs HBT process
technology and does not require any external matching
components. The module operates off of a +12V supply and
does not requiring any negative biasing voltages; an internal
active bias allows the amplifier to maintain high linearity
over temperature. It has the added feature of a +5V power
down control pin. A low-cost metal housing allows the
device to have a low thermal resistance and achieves over
100 years MTTF. All devices are 100% RF and DC tested.
The AP512 is targeted for use as a driver or final stage
amplifier in wireless infrastructure where high linearity and
high power is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G base
stations or repeaters using the UMTS frequency band.
Functional Diagram
Top View
Pin No.
1
2 / 4
3 / 5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Adjacent Channel Leakage Ratio
Power Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Operating Current
(2)
Quiescent Current, Icq
(2)
Device Voltage, Vcc
Device Voltage, Vpd
(3)
Ruggedness
Units
MHz
MHz
dBc
dB
dB
dB
dBm
dBm
A
A
V
V
VSWR
Min
Typ
Max Test Conditions
2110 – 2170
2140
-55
-50
W-CDMA +28 dBm Total Power, ±5 MHz offset
28.5
31
Pout = +28 dBm
14
6
+39
+53
Pout = +28 dBm/tone,
Δ
f
= 1 MHz
1.72
Pout = +28 dBm
1.69
1.80
+12
+5
Pull-down voltage: 0V = “OFF”, 5V=”O(jiān)N”
Pout = +39 dBm CW, all phases
26
1.55
10:1
1. Test conditions unless otherwise noted: 25oC.
2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
WCDMA signal (3GPP Test Model 1+ 32 DPCH)
Rating
-40 to +85
°
C
-55 to +150
°
C
+10 dBm
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
AP512
AP512-PCB
Description
UMTS-band 8W HBT Amplifier Module
Fully-Assembled Evaluation Board
1 2 3 4 5 6
相關(guān)PDF資料
PDF描述
AP513 DCS-band 8W HBT Amplifier Module
AP513-PCB DCS-band 8W HBT Amplifier Module
AP5S HCMOS/TTL COMPATIBLE SURFACE-MOUNT PROGRAMMABLE CRYSTAL CLOCK OSCILLATOR
AP601 High Dynamic Range 1.8W 28V HBT Amplifier
AP601-F High Dynamic Range 1.8W 28V HBT Amplifier
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