參數(shù)資料
型號： AP502-PCB
英文描述： UMTS-band 4W HBT Amplifier Module
中文描述： UMTS的頻段4瓦異質(zhì)結(jié)雙極晶體管放大器模塊
文件頁數(shù)： 3/5頁
文件大?。?/td> 397K
代理商： AP502-PCB
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
Page 3 of 5 February 2006
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
Performance Graphs – Class B Configuration
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
Notes:
1.
Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2.
The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3.
For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a.
Connect RF In and Out
b.
Connect the voltages and ground pins as shown in the circuit.
c.
Apply the RF signal
d.
Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=275mA
26
27
28
29
30
31
2110
2130
2150
2170
Frequency (MHz)
S
-20
-15
-10
-5
0
5
S
S21
S11
S22
Wideband S-Parameters
+25 °C, Icq=275mA
-40
-20
0
20
40
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
M
S21
S11
S22
Gain / Output Power vs. Input Power
2140 MHz, +25 °C, Icq=275mA
28
30
32
34
36
38
-2
0
2
4
6
8
10
Input Power (dBm)
P
25
26
27
28
29
30
G
Pout
Gain
ACLR vs. Channel Power
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
-70
-60
-50
-40
20
21
22
23
24
25
26
27
28
Output Channel Power (dBm)
A
±5 MHz
±10 MHz
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq=275mA
-60
-50
-40
-30
-20
20
22
24
26
28
30
32
Output Power per tone (dBm)
I
20
30
40
50
60
O
IMD3L
IMD3U
IMD5
OIP3
PAE / Icc vs. Output Power
2140 MHz, +25 °C, Icq=275mA
300
400
500
600
700
800
22
24
26
28
30
32
34
Output Power (dBm)
I
0
5
10
15
20
25
P
Icc
PAE
DNP
DNP
DNP
DNP
DNP
DNP
DNP
DNP
0
730
0
10
μ
F
.01
μ
F
.01
μ
F
100pF
100pF
+
+
G
+
6
5
4
2
3
1
RF IN
RF OUT
2.2nH
DNP
相關(guān)PDF資料
PDF描述
AP503 DCS-band 4W HBT Amplifier Module
AP503-PCB DCS-band 4W HBT Amplifier Module
AP504 DCS-band 4W HBT Amplifier Module
AP504-PCB DCS-band 4W HBT Amplifier Module
AP512 UMTS-band 8W HBT Amplifier Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP503 功能描述:射頻放大器 1805-1880MHz 32.2dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AP503-PCB 功能描述:射頻開發(fā)工具 1.80-1.88GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AP504 功能描述:射頻放大器 1705-790MHz 31.5dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AP504-PCB 功能描述:射頻開發(fā)工具 1.71-1.79GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產(chǎn)品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V
AP50B10 制造商:LEM Holdings SSA 功能描述:AP50B10 split core current transducer
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