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參數(shù)資料
| 型號(hào)： | AP4800AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 70K |
| 代理商： | AP4800AGM |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP4800AGM
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
16
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
G
I
D
=9A
V
DS
=20V
V
DS
=16V
V
DS
=12V
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=125
℃
/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
10
20
30
40
50
60
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
T
j
=125
o
C
T
j
=25
o
C
V
DS
=5V
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| AP4800AGM_07 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP4800CGM-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 14MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:10.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.014ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain |
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