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參數(shù)資料
| 型號(hào)： | AP4800AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | AP4800AGM |
AP4800AGM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
0
10
20
30
40
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
V
G
=3.0V
10V
7.0V
5.0V
4.5V
T
A
=25
o
C
0
10
20
30
40
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
12
16
20
24
28
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=7A
T
A
=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=9A
V
G
=10V
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4800AGM_07 | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4800AGM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4800BGM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4800CGM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP4800CGM-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 14MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:10.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.014ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain |
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