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參數(shù)資料
| 型號(hào)： | AP4800AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | AP4800AGM |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
V
GS
=0V, I
D
=250uA
30
-
-
-
-
-
-
V
ΔB
V
DSS
/
Δ
T
j
R
DS(ON)
0.04
13
21
V/
℃
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=7A
V
GS
=4V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=9A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±25V
I
D
=9A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3
Ω,
V
GS
=10V
R
D
=15
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
18
28
m
Ω
m
Ω
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
3
-
1
25
±100
18
-
-
-
-
-
-
1350
-
-
2.1
m
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
13
-
-
-
11
3
7
10
6
23
7
840
190
140
1.4
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Parameter
Test Conditions
Min.
-
-
Typ.
-
18
Max.
1.2
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
I
S
=2.1A, V
GS
=0V
I
S
=9A,
V
GS
=0
V
,
Q
rr
Reverse Recovery Charge
dI/dt=100A/μs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 125
℃
/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP4800AGM
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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| AP4800CGM-HF-3TR | 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 14MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:10.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.014ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain |
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