參數(shù)資料
型號: AP4800AGM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE
中文描述: 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/4頁
文件大?。?/td> 70K
代理商: AP4800AGM
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
BV
DSS
R
DS(ON)
I
D
30V
18m
Ω
9.6A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
50
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
200521074-1/4
AP4800AGM
Rating
30
±25
9.6
7.7
40
2.5
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
0.02
RoHS-compliant Product
Thermal Data
Parameter
-55 to 150
-55 to 150
The Advanced Power MOSFETs from APEC provide the
designer with
the best combination of fast switching,
ruggedized device design, low
on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
SS
G
D
D
D
D
SO-8
G
D
S
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