參數(shù)資料
型號(hào)： AP4519GED
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 6.2 A, 35 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù)： 3/7頁
文件大?。?/td> 98K
代理商： AP4519GED
AP4519GED
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-35
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃,ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-5A
-
64
mΩ
VGS=-4.5V, ID=-3A
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
7
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-35V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-28V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±30
uA
Qg
Total Gate Charge
2
ID=-5A
-
9
15
nC
Qgs
Gate-Source Charge
VDS=-25V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
10
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
130
-
ns
tf
Fall Time
RD=15Ω
-
100
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS=-25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=-1.5A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-5A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad.
3/7
相關(guān)PDF資料
PDF描述
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