參數(shù)資料
型號: AP4521GEH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-5
文件頁數(shù): 1/7頁
文件大?。?/td> 117K
代理商: AP4521GEH
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
40V
▼ Good Thermal Performance
RDS(ON)
36mΩ
▼ Fast Switching Performance
ID
11.7A
▼ RoHS Compliant
P-CH
BVDSS
-40V
RDS(ON)
72mΩ
Description
ID
-8.7A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±16
±20
V
ID@TC=25℃
Continuous Drain Current
3
11.7
-8.7
A
ID@TC=100℃
Continuous Drain Current
3
7.4
-5.5
A
IDM
Pulsed Drain Current
1
50
-40
A
PD@TC=25℃
Total Power Dissipation
9
W
Linear Derating Factor
0.07
W/℃
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
3
Max.
14
℃/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
110
℃/W
Data and specifications subject to change without notice
Parameter
200628062-1/7
Thermal Data
AP4521GEH
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
S1
TO-252-4L
G1
S2
G2
D1/D2
S1
G1
D1
S2
G2
D2
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