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參數(shù)資料
| 型號： | AP4521GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.8 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AP4521GEM |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
40V
▼ Fast Switching Performance
RDS(ON)
36mΩ
▼ RoHS Compliant
ID
5.8A
P-CH
BVDSS
-40V
RDS(ON)
72mΩ
Description
ID
-4.1A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
40
-40
V
VGS
Gate-Source Voltage
±16
±20
V
ID@TA=25℃
Continuous Drain Current
3
5.8
-4.2
A
ID@TA=70℃
Continuous Drain Current
3
4.7
-3.3
A
IDM
Pulsed Drain Current
1
20
-20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Parameter
200629062-1/7
Thermal Data
AP4521GEM
Pb Free Plating Product
S1
G1
S2
G2
D1
D2
SO-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
S1
G1
D1
S2
G2
D2
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