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參數(shù)資料
| 型號： | AP4521GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5.8 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 115K |
| 代理商： | AP4521GEM |
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
4/7
AP4521GEM
0
5
10
15
20
0123
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
5
10
15
20
012345
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T A = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
20
40
60
80
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON0
(m
Ω
)
I D =3A
T A =25
o C
0.8
1.2
1.6
2.0
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =5A
V G =10V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I S
(A
)
T j =25
o C
T j =150
o C
20.0
40.0
60.0
0
5
10
15
20
I D , Drain Current (A)
R
DS(ON)
(m
)
V GS =4.5V
V GS =10V
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