參數(shù)資料
型號(hào)： AP4519GED
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 6.2 A, 35 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù)： 2/7頁
文件大?。?/td> 98K
代理商： AP4519GED
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
35
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=6A
-
32
mΩ
VGS=4.5V, ID=4A
-
48
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
10
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=35V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=28V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±30
uA
Qg
Total Gate Charge
2
ID=6A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=25V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
13
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-3
-
ns
Ciss
Input Capacitance
VGS=0V
-
990
1580
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.5A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=6A, VGS=0V
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
23
-
nC
2/7
AP4519GED
相關(guān)PDF資料
PDF描述
AP4521GEH 11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
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AP4523GD 5.6 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP4526AGH-HF 40 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
AP4526GH 7.6 A, 40 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
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