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參數(shù)資料
| 型號： | AP4513GH-A |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.7 A, 35 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-5 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 152K |
| 代理商： | AP4513GH-A |
APTM120SK29T
A
P
T
M
120S
K
29T
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
5 – 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S,
D
rai
n
to
S
o
u
rce
B
reak
d
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
ra
in
t
o
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID=17A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Th
re
shol
d
V
o
lt
ag
e
(N
o
rma
li
ze
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
1200
Ciss
Crss
Coss
100
1000
10000
100000
0
102030
40
50
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
14
0
80
160
240
320
400
480
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=34A
TJ=25°C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AP4513GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP4515GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4519GED | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Fast Switching Speed, PDIP-8 Package |
| AP451N | 制造商:ANACHIP 制造商全稱:Anachip Corp 功能描述:2 Channel Linear Controller with Independent Enable Function |
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