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參數(shù)資料
| 型號： | AP4513GH-A |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 7.7 A, 35 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-5 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 152K |
| 代理商： | AP4513GH-A |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
35V
▼ Good Thermal Performance
RDS(ON)
32mΩ
▼ Fast Switching Performance
ID
7.7A
P-CH
BVDSS
-35V
RDS(ON)
68mΩ
Description
ID
-5.5A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
35
-35
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current
3
7.7
-5.5
A
ID@TA=70℃
Continuous Drain Current
3
6.2
-4.4
A
IDM
Pulsed Drain Current
1
40
-40
A
PD@TA=25℃
Total Power Dissipation
W
Linear Derating Factor
0.025
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
10
℃/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
40
℃/W
Data and specifications subject to change without notice
Parameter
200627072-1/7
Thermal Data
AP4513GH-A
RoHS-compliant Product
3.125
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G2
D2
S2
G1
D1
S1
S1
TO-252-4L
G1
S2
G2
D1/D2
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相關代理商/技術參數(shù) |
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| AP4513GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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