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參數(shù)資料
| 型號： | AP4511GED |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 119K |
| 代理商： | AP4511GED |
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=6A
-
28
mΩ
VGS=4.5V, ID=4A
-
36
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=40V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=32V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±16V
-
±30
uA
Qg
Total Gate Charge
2
ID=6A
-
8.2
13
nC
Qgs
Gate-Source Charge
VDS=20V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.6
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
7
-
ns
tr
Rise Time
ID=6A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=3.3Ω
-4
-
ns
Ciss
Input Capacitance
VGS=0V
-
590
940
pF
Coss
Output Capacitance
VDS=20V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.25A, VGS=0V
-
1.6
V
trr
Reverse Recovery Time
2
IS=6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
2/7
AP4511GED
N-CH Electrical Characteristics@ Tj=25
oC(unless otherwise specified)
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PDF描述 |
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| AP4513GH-A | 7.7 A, 35 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP4519GED | 6.2 A, 35 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4521GEH | 11.7 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP4521GEM | 5.8 A, 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| AP4523GD | 5.6 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4511GED-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge |
| AP4511GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4511GH-A | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance |
| AP4511GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4511GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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