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參數(shù)資料
| 型號(hào)： | AP4503GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大小： | 121K |
| 代理商： | AP4503GM |
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
-6.3
-5
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
AP4503GM
0
20
40
60
80
100
01
23
45
67
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
20
30
40
50
60
24
68
10
-V GS ,Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =-6 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =-6A
V G =10V
1
1.5
2
2.5
-50
0
50
100
150
T j ,Junction Temperature (
o C)
-V
GS(t
h)
(V
)
0
1
2
3
4
5
6
7
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0
10
20
30
40
50
60
70
01234
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
V G =-3.0V
-10V
-7.0V
-5.0V
-4.5V
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