參數(shù)資料
型號: AP4506GEM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/7頁
文件大?。?/td> 117K
代理商: AP4506GEM-HF
AP4506GEM-HF
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼ Low On-resistance
RDS(ON)
30mΩ
▼ Fast Switching Performance
ID
6.4A
▼ RoHS Compliant
P-CH BVDSS
-30V
RDS(ON)
40m
Description
ID
-6A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
6.4
-6.0
A
ID@TA=70℃
Continuous Drain Current
3
5.1
-4.8
A
IDM
Pulsed Drain Current
1
30
-30
A
PD@TA=25℃
Total Power Dissipation
2.0
W
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
200902103
Parameter
1
Thermal Data
Halogen-Free Product
S1
G1
D1
S2
G2
D2
S1
G1
S2
G2
D1
D2
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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