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參數(shù)資料
| 型號(hào)： | AP4503GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.9 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | AP4503GM |
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
30V
▼ Low On-resistance
RDS(ON)
28mΩ
▼ Fast Switching Performance
ID
6.9A
P-CH BVDSS
-30V
RDS(ON)
36mΩ
Description
ID
-6.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Continuous Drain Current
3
6.9
-6.3
A
ID@TA=70℃
Continuous Drain Current
3
5.5
-5
A
IDM
Pulsed Drain Current
1
30
-30
A
PD@TA=25℃
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
201010083
Parameter
1
Thermal Data
AP4503GM
RoHS-compliant Product
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
D2
S2
G1
D1
S1
S1
G1
S2
G2
D1
D2
SO-8
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