參數(shù)資料
型號: AOU417L
廠商: ALPHA
元件分類: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -溝道增強型場效應晶體管
文件頁數(shù): 1/5頁
文件大?。?/td> 162K
代理商: AOU417L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
R
θ
JA
R
θ
JL
Typ
105
2.5
Max
125
3
V
V
±20
-18
-18
-40
25
A
-18
16.2
50
A
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
-30
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Maximum
Units
Parameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
Junction and Storage Temperature Range
-55 to 175
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
P
D
W
°C
Maximum Junction-to-Case
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
Steady-State
AOU417
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = -30V
I
D
= -18A (V
GS
= -10V)
R
DS(ON)
< 22m
(V
GS
= -10V)
R
DS(ON)
< 40m
(V
GS
= -4.5V)
General Description
The AOU417 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a load switch or in
PWM applications.
Standard product AOU417 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU417L is a Green Product ordering option.
AOU417 and AOU417L are electrically identical
.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
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