參數(shù)資料
型號: AOU438
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大?。?/td> 72K
代理商: AOU438
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
R
θ
JA
R
θ
JC
Typ
Max
100
1.5
0.8
mJ
T
C
=100°C
I
D
85
63
200
30
112
100
50
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Pulsed Drain Current
Continuous Drain
Current
B,G
Maximum
30
±20
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
G
T
C
=100°C
B
Gate-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
W
Junction and Storage Temperature Range
A
P
D
°C
Steady-State
Steady-State
A
Power Dissipation
B
-55 to 175
T
C
=25°C
°C/W
Thermal Characteristics
Parameter
Units
°C/W
AOU438
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4.5m
(V
GS
= 10V)
R
DS(ON)
< 6.5m
(V
GS
= 4.5V)
General Description
The AOU438 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOU438 is Pb-free (meets ROHS
& Sony 259 specifications). AOU438L is a Green
Product ordering option. AOU438 and AOU438L are
electrically identical
.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
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