參數(shù)資料
型號(hào): AOU452L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大?。?/td> 78K
代理商: AOU452L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
R
θ
JA
R
θ
JC
Typ
39
2.5
Max
50
3
Repetitive avalanche energy L=0.1mH
C
135
50
25
A
mJ
Junction and Storage Temperature Range
A
P
D
°C
-55 to 175
T
C
=100°C
Avalanche Current
C
30
I
D
55
40
100
Pulsed Drain Current
C
Power Dissipation
B
T
C
=25°C
Continuous Drain
Current
G
Maximum
25
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
T
C
=100°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
±20
Gate-Source Voltage
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
Steady-State
AOU452
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) =25V
I
D
= 55 A (V
GS
= 10V)
R
DS(ON)
< 9 m
(V
GS
= 10V)
R
DS(ON)
< 15 m
(V
GS
= 4.5V)
General Description
The AOU452 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOU452 is Pb-free (meets ROHS & Sony
259 specifications). AOU452L is a Green Product
ordering option. AOU452 and AOU452L are
electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
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