參數(shù)資料
型號: AOU448
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大?。?/td> 73K
代理商: AOU448
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
44
2
Max
55
3
R
θ
JC
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
Steady-State
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±20
75
56
200
30
45
Gate-Source Voltage
Continuous Drain
Current
G
Drain-Source Voltage
30
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Power Dissipation
B
Junction and Storage Temperature Range
T
C
=25°C
T
C
=100°C
Maximum
Units
T
C
=25°C
T
C
=100°C
I
D
A
P
D
°C
50
25
-55 to 175
A
mJ
G D S
TO-251
Top View
Drain Connected
to Tab
AOU448
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 75A
R
DS(ON)
< 5.6m
(V
GS
= 10V)
R
DS(ON)
< 9m
(V
GS
= 4.5V)
General Description
The AOU448 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOU448 is Pb-free (meets ROHS & Sony
259 specifications). AOU448L is a Green Product
ordering option. AOU448 and AOU448L are
electrically identical.
G
D
S
Alpha & Omega Semiconductor, Ltd.
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