參數(shù)資料
型號(hào): AOU436
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場(chǎng)效應(yīng)管
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 77K
代理商: AOU436
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
R
θ
JA
R
θ
JL
Typ
100
2
Max
125
3
Maximum Junction-to-Lead
C
Steady-State
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
Junction and Storage Temperature Range
-55 to 175
Thermal Characteristics
Parameter
Units
°C
A
mJ
Repetitive avalanche energy L=0.1mH
C
Avalanche Current
C
30
143
50
Maximum
30
±20
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
57
40
100
Continuous Drain
Current
B,
Pulsed Drain Current
T
C
=25°C
T
C
=100°C
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
A
I
D
W
T
C
=100°C
25
Power Dissipation
B
T
C
=25°C
P
D
AOU436
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 57A (V
GS
= 10V)
R
DS(ON)
< 8.5m
(V
GS
= 10V)
R
DS(ON)
< 14m
(V
GS
= 4.5V)
General Description
The AOU436 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Standard Product AOU436 is Pb-free
(meets ROHS & Sony 259 specifications). AOU436L
is a Green Product ordering option. AOU436 and
AOU436L are electrically identical.
G
D
S
Top View
Drain Connected
to Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
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