參數(shù)資料
型號: AOU414L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大?。?/td> 69K
代理商: AOU414L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
R
θ
JA
R
θ
JL
Typ
100
0.7
Max
125
1.5
V
±20
85
73
200
30
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
Steady-State
Power Dissipation
B
Junction and Storage Temperature Range
T
C
=25°C
T
C
=100°C
P
D
Maximum
30
Units
V
Parameter
T
C
=25°C
G
T
C
=100°C
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
A
I
D
-55 to 175
mJ
W
50
°C
100
140
A
AOU414
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 5.7m
(V
GS
= 10V)
R
DS(ON)
< 7.5m
(V
GS
= 4.5V)
General Description
The AOU414 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
Standard Product AOU414 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU414L is a Green Product ordering option.
AOU414 and AOU414L are electrically identical.
G
D
S
Top View
Drain
Connected to
Tab
TO-251
G D S
Alpha & Omega Semiconductor, Ltd.
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參數(shù)描述
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