參數(shù)資料
型號: AOL1444L
廠商: ALPHA
英文描述: N-Channel Enhancement Mode Field Effect Transistor
中文描述: N溝道增強(qiáng)型場效應(yīng)管
文件頁數(shù): 1/5頁
文件大小: 156K
代理商: AOL1444L
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
19.6
48
1
Max
25
60
1.5
R
θ
JC
I
DSM
17
1
3
30
45
A
T
A
=70°C
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Steady-State
Steady-State
°C/W
°C/W
P
DSM
2.1
1.3
T
A
=70°C
-55 to 175
Pulsed Drain Current
Continuous Drain
Current
G
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Gate-Source Voltage
Continuous Drain
Current
B,G
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
10s
R
θ
JA
P
D
Maximum
30
±20
85
73
200
Units
V
V
Parameter
Drain-Source Voltage
T
C
=25°C
G
T
C
=100°C
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
A
mJ
A
I
D
W
50
°C
100
W
AOL1444
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 4.3m
Ω
(V
GS
= 10V)
R
DS(ON)
< 6.3m
Ω
(V
GS
= 4.5V)
General Description
The AOL1444 uses advanced trench technology to
provide excellent R
DS(ON)
, shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion.
Standard Product AOL1444 is
Pb-free (meets ROHS & Sony 259 specifications).
AOL1444L is a Green Product ordering option.
AOL1444 and AOL1444L are electrically identical.
G
D
S
Ultra
SO-8
TM
Top View
Bottom tab
connected to
drain
Fits SOIC8
footprint !
S
G
D
Alpha & Omega Semiconductor, Ltd.
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