參數(shù)資料
型號(hào): AOD603L
廠商: ALPHA
英文描述: Complementary Enhancement Mode Field Effect Transistor
中文描述: 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 7/9頁(yè)
文件大?。?/td> 219K
代理商: AOD603L
AOD603
P-Channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
0
2
4
6
8
10
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-
D
(
80
100
120
140
160
180
200
220
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
R
D
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-
S
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
2
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
N
V
GS
=-4.5V
I
D
=-6A
V
GS
=-10V
I
D
=-12A
50
100
150
200
250
300
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=-5V
V
GS
=-4.5V
V
GS
=-10V
I
D
=-12A
25°C
125°C
0
5
10
15
20
25
30
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
-
D
V
GS
=-4V
-3.5V
-6V
-7V
-10V
-4.5V
-5V
-3V
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AOD604 Complementary Enhancement Mode Field Effect Transistor
AOD604L Complementary Enhancement Mode Field Effect Transistor
AOD606 Complementary Enhancement Mode Field Effect Transistor
AOD606L Complementary Enhancement Mode Field Effect Transistor
AOD607 Complementary Enhancement Mode Field Effect Transistor
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