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參數(shù)資料
| 型號： | AOD606 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 215K |
| 代理商： | AOD606 |
Symbol
V
DS
V
GS
Max p-channel
-40
±20
Units
V
V
I
DM
I
AR
E
AR
A
mJ
T
J
, T
STG
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
17.4
50
4
16.7
40
2.5
Max
30
60
7.5
25
50
3
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JC
R
θ
JC
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Maximum Junction-to-Ambient
A
Steady-State
t
≤
10s
t
≤
10s
Steady-State
40
±20
8
8
20
20
10
2
1.3
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
50
25
2.5
1.6
T
C
=25°C
T
C
=100°C
I
D
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Steady-State
Steady-State
30
T
C
=100°C
T
A
=25°C
T
A
=70°C
Power Dissipation
B
T
C
=25°C
P
D
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
P
DSM
30
8
-55 to 175
-30
-8
A
W
8
8
AOD606
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 40V -40V
I
D
= 8A (V
GS
=10V) -8A (V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 33 m
(V
GS
=10V) < 50 m
(V
GS
= -10V)
< 47 m
(V
GS
=4.5V) < 70 m
(V
GS
= -4.5V)
General Description
The AOD606 uses advanced trench
technology MOSFETs to provide excellent
R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.
Standard product AOD606 is Pb-
free (meets ROHS & Sony 259 specifications).
AOD606L is a Green Product ordering option.
AOD606 and AOD606L are electrically
identical.
G1
D1/D2
S1
G2
S2
n-channel
p-channel
S1 G1 S2 G2
TO-252-4L
D-PAK
Top View
Drain Connected to
Tab
D1/D2
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOD606L | Complementary Enhancement Mode Field Effect Transistor |
| AOD607 | Complementary Enhancement Mode Field Effect Transistor |
| AOD607L | Complementary Enhancement Mode Field Effect Transistor |
| AOD608 | Complementary Enhancement Mode Field Effect Transistor |
| AOL1400 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AOD606_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOD606L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOD607 | 功能描述:MOSFET COMPL 30V 12A TO252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AOD607_001 | 功能描述:MOSFET N/P-CH 30V TO252-4 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:N 和 P 溝道互補型 FET 功能:標(biāo)準(zhǔn) 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:12A（Tc） 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-252-5，DPak（4 引線 + 接片），TO-252AD 供應(yīng)商器件封裝:TO-252-4L 標(biāo)準(zhǔn)包裝:2,500 |
| AOD607_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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