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參數(shù)資料
| 型號(hào)： | AOD476 |
| 廠商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強(qiáng)型場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | AOD476 |
1.4
193
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
17
40
3.6
Max
25
50
4.5
R
θ
JC
W
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
V
V
±16
25
23
75
13
25
Gate-Source Voltage
Drain-Source Voltage
20
Maximum
Units
Pulsed Drain Current
C
Avalanche Current
C
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
Continuous Drain
Current
T
C
=25°C
G
T
C
=100°C
Repetitive avalanche energy L=0.3mH
C
I
D
Junction and Storage Temperature Range
A
P
D
°C
33.3
16.7
2.5
-55 to 175
A
mJ
W
T
A
=70°C
1.7
Power Dissipation
A
P
DSM
AOD476
N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 20V
I
D
= 25A (V
GS
= 10V)
R
DS(ON)
<21 m
(V
GS
= 10V)
R
DS(ON)
<28 m
(V
GS
= 4.5V)
R
DS(ON)
<79 m
(V
GS
= 2.5V)
UIS Tested
Rg,Ciss,C18
General Description
The AOD476 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product
AOD476 is Pb-free (meets ROHS & Sony
259 specifications). AOD476L is a Green Product
ordering option. AOD476 and AOD476L are
electrically identical.
G
D
S
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
Alpha & Omega Semiconductor, Ltd.
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| AOD476_08 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| AOD478 | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 100V 11A 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 100V 2.5A TO252 制造商:AOS 功能描述:MOSFET |
| AOD480 | 功能描述:MOSFET N-CH 30V 25A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| AOD480_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AOD482 | 功能描述:MOSFET N-CH 100V 32A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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