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參數(shù)資料
| 型號： | AO9926 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 234K |
| 代理商： | AO9926 |
AO9926
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
1
nA
V
A
0.4
15
0.6
41
58
52
67
11
0.76
V
50
70
63
87
T
J
=125°C
2
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capa
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse RI
F
=5A, dI/dt=100A/
s
Body Diode Reverse RI
F
=5A, dI/dt=100A/
μ
s
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
S
V
A
1
C
iss
C
oss
C
rss
R
g
436
66
44
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
6.2
1.6
0.5
5.5
6.3
40
12.7
nC
nC
nC
ns
ns
ns
ns
12.3
nC
D
=250
μ
A, V
GS
=0V
Zero Gate Voltage
Drain Current
I
DSS
V
DS
GS
=0V
2V
μ
A
Gate-Body leakage curV
DS
=0V, V
GS
=±8V
Gate Threshold VoltagV
DS
=V
GS
I
D
=250
μ
A
On state drain current V
GS
=4.5V, V
DS
=5V
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
D
=5A
m
V
GS
=2.5V, I
D
=4A
V
GS
=1.8V, I
D
=3A
Forward TransconductV
DS
=5V, I
D
=5A
Diode Forward VoltageI
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=1.8V
V
GS
=4.5V, V
DS
=10V, I
D
=5A
V
GS
=5V, V
DS
=10V, R
L
=2
,
R
GEN
=6
0
5
10
15
20
0
3
4
5
I
V
GS
=1.5V
8V
0
4
6
10
12
0.4
0.8
1.2
2
2.4
2.8
Figure 2: Transfer Characteristics
I
D
(
20
40
60
80
100
0
12
R
D
)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
V
GS
=2.5V, 4A
V
GS
=4.5V, 5A
30
40
50
60
70
80
90
100
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
)
25°C
125°C
V
DS
=5V
V
GS
=2.5V
V
GS
=4.5V
I
D
=5A
V
GS
=1.8V, 2A
25°C
125°C
4.5V
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO9926A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO9926B | 功能描述:MOSFET DUAL N-CH 20V 7.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO9926B_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual N-Channel MOSFET |
| AO9926BL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO9926BL_101 | 功能描述:MOSFET 2N-CH 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:2 個 N 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:7.6A 不同?Id，Vgs 時的?Rds On（最大值）:23 毫歐 @ 7.6A，10V 不同 Id 時的 Vgs（th）（最大值）:1.1V @ 250μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:12.5nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:630pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SOIC 標(biāo)準(zhǔn)包裝:3,000 |
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