- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366561 > AO9926 (Alpha Industries, Inc.) Dual N-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | AO9926 |
| 廠商： | Alpha Industries, Inc. |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 234K |
| 代理商： | AO9926 |
AO9926
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
1
nA
V
A
0.4
15
0.6
40
56
54
72
11
0.76
50
70
65
90
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
S
V
A
1
2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
436
66
44
3
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
5.54
1.26
0.52
5
7
29
6.2
nC
nC
nC
ns
ns
ns
ns
13.7
3.8
ns
nC
I
F
=5A, dI/dt=100A/
μ
s
I
F
=5A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=4.5V, I
D
=5A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=1.8V, I
D
=2A
V
DS
=5V, I
D
=5A
I
S
=1A,V
GS
=0V
V
GS
=2.5V, I
D
=4A
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=10V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
GS
=4.5V, V
DS
=10V, I
D
=5A
V
GS
=5V, V
DS
=10V, R
L
=2
,
R
GEN
=6
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AOB420 | N-Channel Enhancement Mode Field Effect Transistor |
| AOB420L | N-Channel Enhancement Mode Field Effect Transistor |
| AP03N70P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP134-501 | LED Lamp; Color:Orange; Luminous Intensity (MSCP):25; Viewing Angle:60; Forward Current:30mA; Forward Voltage:2V; LED Color:Orange; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3" |
| AP4936M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO9926A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO9926B | 功能描述:MOSFET DUAL N-CH 20V 7.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO9926B_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual N-Channel MOSFET |
| AO9926BL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO9926BL_101 | 功能描述:MOSFET 2N-CH 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:2 個(gè) N 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:7.6A 不同?Id，Vgs 時(shí)的?Rds On（最大值）:23 毫歐 @ 7.6A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:1.1V @ 250μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:12.5nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:630pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商器件封裝:8-SOIC 標(biāo)準(zhǔn)包裝:3,000 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。