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參數(shù)資料
| 型號(hào)： | AO6605L |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 189K |
| 代理商： | AO6605L |
AO6605
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-20
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1
nA
V
A
-0.3
-15
-0.55
81
111
108
146
6
-0.78
97
135
130
190
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
4
S
V
A
-1
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
540
72
49
15
700
pF
pF
pF
19.5
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
6.1
0.6
1.6
12
15
49
27
22
16
7.5
nC
nC
nC
ns
ns
ns
ns
26
ns
nC
P-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-2.5A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
V
DS
=-5V, I
D
=-3A
I
S
=-1A,V
GS
=0V
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2.5A
V
GS
=-4.5V, V
DS
=-10V, R
L
=3.9
,
R
GEN
=3
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.5A, dI/dt=100A/
μ
s
I
F
=-2.5A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
10s ther=25°C.
resistance rating.
C. The R
θ
JL
and lead to ambient.
μ
2
FR-4 boars pulses, duty cycle 0.5% max.
A
=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS I
N LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS
OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Al
pha & Omega Semiconductor, Ltd.
The value in any given application depends on the user's specific board design. The current rating is based on the t
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environm≤
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
B: Repetitive rating, pulse width limited by junction temperature.
B: Repetitiv is the sum of the thermal impedence from junction to lead R
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
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