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參數(shù)資料
| 型號： | AO4914AL |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 150K |
| 代理商： | AO4914AL |
Absolute Maximum Ratings T =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
T
A
=70°C
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Symbol
V
DS
V
GS
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
Units
V
V
30
±20
8.5
6.6
30
2
1.28
T
A
=25°C
I
D
I
DM
A
Power Dissipation
P
D
W
T
J
, T
STG
-55 to 150
°C
Parameter
Reverse Voltage
Continuous Forward
Current
A
Pulsed Diode Forward Current
B
Symbol
V
DS
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
T
A
=25°C
T
A
=70°C
I
F
I
FM
A
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
D
W
T
J
, T
STG
°C
AO4914A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A (V
GS
= 10V) I
D
= 8.5A (V
GS
= 10V)
R
DS(ON)
< 18m
<18m
(V
GS
= 10V)
R
DS(ON)
< 28m
<28m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4914A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product
AO4914A is Pb-free (meets ROHS &
Sony 259 specifications). AO4914AL is a Green Product
ordering option. AO4914A and AO4914AL are
electrically identical.
SOIC-8
G2
S2
G1
S1/A
D2
D2
D1/K
D1/K
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4914L | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標(biāo)準(zhǔn)包裝:1 |
| AO4915 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AO4915L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Plastic Encapsulated Device |
| AO4916 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4916A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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