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參數(shù)資料
| 型號： | AO4912L |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對稱雙N溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 155K |
| 代理商： | AO4912L |
Symbol
V
DS
V
GS
Max Q2
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
FM
T
J
, T
STG
Gate-Source Voltage
Continuous Drain
Current
A
±12
7
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
W
-55 to 150
-55 to 150
Junction and Storage Temperature Range
2
1.28
1.28
T
A
=25°C
T
A
=70°C
2
A
6.4
30
40
6.8
T
A
=25°C
T
A
=70°C
Power Dissipation
P
D
Pulsed Drain Current
B
I
D
Maximum Schottky
30
3
Max Q1
30
±20
8.5
Units
V
T
A
=25°C
T
A
=70°C
Parameter
Reverse Voltage
Continuous Forward
Current
A
A
2.2
20
2
Pulsed Diode Forward Current
B
P
D
I
F
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
°C
AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A I
D
=7A (V
GS
= 10V)
R
DS(ON)
< 17m
<26m
(V
GS
= 10V)
R
DS(ON)
< 25m
<31m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4912 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS &
Sony 259 specifications). AO4912L is a Green Product
ordering option. AO4912 and AO4912L are electrically
identical.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
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|---|---|
| AO4914A | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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| AO4914 | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4916A | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4916AL | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AO4914 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應商器件封裝:8-SO 標準包裝:1 |
| AO4914_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode |
| AO4914A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4914AL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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