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參數(shù)資料
| 型號(hào)： | AO4836 |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 118K |
| 代理商： | AO4836 |
AO4836
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
30
V
1
5
10
3
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
μ
A
1
20
2
V
A
20
29
30
18
0.77
24
35
40
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
10
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
522
110
75
2.1
630
pF
pF
pF
3
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
11
5.3
1.9
4
4.7
4.9
16.2
3.5
15.7
7.9
15
7
nC
nC
nC
nC
ns
ns
ns
ns
7
10
22
7
20
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=7.2A, dI/dt=100A/
μ
s
I
F
=7.2A, dI/dt=100A/
μ
s
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
μ
A
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=7.2A
R
DS(ON)
Static Drain-Source On-Resistance
m
V
GS
=4.5V, I
D
=4A
V
DS
=5V, I
D
=7.2A
I
S
=1A
V
GS
=0V, V
DS
=0V, f=1MHz
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=15V, f=1MHz
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
GS
=10V, V
DS
=15V, R
L
=2.1
,
R
GEN
=3
V
GS
=10V, V
DS
=15V, I
D
=7.2A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. Rev 0: July 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
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| AO4838 | 功能描述:MOSFET 2N-CH 30V 11A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4840 | 功能描述:MOSFET DUAL N-CH 40V 6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4840_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:40V Dual N-Channel MOSFET |
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