參數(shù)資料
型號: AO4840
廠商: ALPHA
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 雙N溝道增強型場效應(yīng)晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 777K
代理商: AO4840
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
48
74
35
Max
62.5
110
50
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t ≤ 10s
Steady-State
Junction and Storage Temperature Range
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
A
=25°C
T
A
=70°C
Units
V
V
Max
40
±20
6
5
20
T
A
=70°C
T
A
=25°C
P
D
2
1.28
Thermal Characteristics
Power Dissipation
I
D
-55 to 150
A
W
°C
°C/W
Units
°C/W
°C/W
R
θ
JA
AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
(V) = 40V
I
D
= 6A (V
GS
=10V)
R
DS(ON)
< 31m
(V
GS
=10V)
R
DS(ON)
< 45m
(V
GS
=4.5V)
General Description
The AO4840 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low gate
charge. This dual device is suitable for use as a load
switch or in PWM applications.
Standard Product
AO4840 is Pb-free (meets ROHS & Sony 259
specifications). AO4840L is a Green Product
ordering option. AO4840 and AO4840L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
D1
G2
D2
S2
G1
S1
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO4840L Dual N-Channel Enhancement Mode Field Effect Transistor
AO4842 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4844 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor
AO4900A Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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