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參數(shù)資料
| 型號(hào)： | AO4832L |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見的漏雙N溝道增強(qiáng)型場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 118K |
| 代理商： | AO4832L |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
64
89
53
Max
83
120
70
R
θ
JL
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
°C/W
t
≤
10s
Steady-State
R
θ
JA
±12
8
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Drain-Source Voltage
30
Maximum
Units
V
V
Parameter
T
A
=25°C
T
A
=70°C
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
6
30
1.5
1
Power Dissipation
A
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
A
P
D
°C
-55 to 150
I
D
AO4832
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
V
DS
(V) = 30V
I
D
= 8 A (V
GS
= 10V)
R
DS(ON)
< 15m
(V
GS
= 10V)
R
DS(ON)
< 17m
(V
GS
= 4.5)
R
DS(ON)
< 23m
(V
GS
= 2.5V)
General Description
The AO4832 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
Standard Product
AO4832 is Pb-free (meets ROHS & Sony 259
specifications). AO4832L is a Green Product ordering
option. AO4832 and AO4832L are electrically identical.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4836 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4836L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4838 | 功能描述:MOSFET 2N-CH 30V 11A 8SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4840 | 功能描述:MOSFET DUAL N-CH 40V 6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4840_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:40V Dual N-Channel MOSFET |
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